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A filled state STM image of Si(100)-2x1 monohydride surface after patterning formed by desorbing H atoms by the electrons from the STM tip at 4V. The two 10nm wide lines were made by writing 9 passes with 1nm pitch, while the thin lines were made by writing a single pass each with 6nm pitch. This image is 240x240nm².

[Phys. Rev. Lett. 78, 1271-1274 (1997)]


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Home Research Current Focus Research Highlights Teaching Group Current Members Previous Members Gallery Publications Links	Research Highlights A filled state STM image of Si(100)-2x1 monohydride surface after patterning formed by desorbing H atoms by the electrons from the STM tip at 4V. The two 10nm wide lines were made by writing 9 passes with 1nm pitch, while the thin lines were made by writing a single pass each with 6nm pitch. This image is 240x240nm². [Phys. Rev. Lett. 78, 1271-1274 (1997)]