After a 0.15ML phosphine adsorption on Si(100)-2x1 surface
at room temperature, 50ML Si was deposited on the P-covered
surface at 166°C followed by 465°C-15s annealing. The final
surface as shown above was terminated by atomic hydrogen.
Transport measurement at 0.3K reveals near 100% dopant activation
with a mobility ~38cm2/Vs.
