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Research Highlights 3 ML Si desposition on a H-terminated Si(100)-2x1 surface at 530 K. 2D epitaxial domains are clear but small, due to the increased diffusion barrier on the monohydride surfaces. [Phys. Rev. B 70, 115309 (2004).]
3 ML Si desposition on a H-terminated Si(100)-2x1 surface at 530 K. 2D epitaxial domains are clear but small, due to the increased diffusion barrier on the monohydride surfaces. [Phys. Rev. B 70, 115309 (2004).]
3 ML Si desposition on a H-terminated Si(100)-2x1 surface at 530 K. 2D epitaxial domains are clear but small, due to the increased diffusion barrier on the monohydride surfaces.
[Phys. Rev. B 70, 115309 (2004).]
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