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Research Highlights 10 ML Si desposition on a H-terminated Si(100)-3x1 surface at 530 K. The increased diffusion barrier by the dihydride units on the surface renderes homoepitaxy impossible at such temperatures. The size of the image is 200 nm. [Phys. Rev. B 70, 115309 (2004).]
10 ML Si desposition on a H-terminated Si(100)-3x1 surface at 530 K. The increased diffusion barrier by the dihydride units on the surface renderes homoepitaxy impossible at such temperatures. The size of the image is 200 nm. [Phys. Rev. B 70, 115309 (2004).]
10 ML Si desposition on a H-terminated Si(100)-3x1 surface at 530 K. The increased diffusion barrier by the dihydride units on the surface renderes homoepitaxy impossible at such temperatures. The size of the image is 200 nm.
[Phys. Rev. B 70, 115309 (2004).]
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