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Nanoscale Devices Publications

(1) J. R. Tucker, C. Wang and T.-C. Shen,"Metal silicide patterning: a new approach to silicon nanoelectronics", Nanotechnology 7, 275 (1996).

(2) J. R. Tucker, and T.-C. Shen, "New approaches to silicon nanoelectronics", Future Electronics Device report 9 Suppl.2, 2 (1998).

(3) J. R. Tucker and T. C. Shen, "Prospects for atomically ordered device structures based on STM lithography", Solid State Electronics 42, 1061 (1998).

(4) J. R. Tucker and T.-C. Shen, "Toward atom-scale silicon electronics", J. Surf. Analy. 3, 172 (1998).

(5) J.R. Tucker and T.-C. Shen, "Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in Silicon?", Int. J. Circuit Theo. Appl. 28, 553 (2000).

(6) T.-C. Shen, "Role of scanning probes in nanoelectronics: a critical review", Surf. Rev. Lett. 7, 683 (2000).

(7) J. R. Tucker and T.-C. Shen, "Fabricating an all-epitaxial quantum computer" Quantum Information Computation 1, 129-133 (2001).

(8) T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. L.Yang, R. R. Du, J. R. Tucker, "Nanoscale electronics based on 2D dopant patterns in silicon", J. Vac. Sci. Technol. B 22, 3182 (2004).

(9) S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. Shen, "Electron transport in laterally confined phosphorus d-layers in silicon", Phys. Rev. B 74, 153311 (2006).