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Welcome to the Utah State University Nanoelectronics Laboratory nanola

A. Nanoscale Devices

(1) J. R. Tucker, C. Wang and T.-C. Shen,"Metal silicide patterning: a new approach to silicon nanoelectronics", Nanotechnology 7, 275 (1996).

(2) J. R. Tucker, and T.-C. Shen, "New approaches to silicon nanoelectronics", Future Electronics Device report 9 Suppl.2, 2 (1998).

(3) J. R. Tucker and T. C. Shen, "Prospects for atomically ordered device structures based on STM lithography", Solid State Electronics 42, 1061 (1998).

(4) J. R. Tucker and T.-C. Shen, "Toward atom-scale silicon electronics", J. Surf. Analy. 3, 172 (1998).

(5) J.R. Tucker and T.-C. Shen, "Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in Silicon?", Int. J. Circuit Theo. Appl. 28, 553 (2000).

(6) T.-C. Shen, "Role of scanning probes in nanoelectronics: a critical review", Surf. Rev. Lett. 7, 683 (2000).

(7) J. R. Tucker and T.-C. Shen, "Fabricating an all-epitaxial quantum computer" Quantum Information Computation 1, 129-133 (2001).

(8) T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. L.Yang, R. R. Du, J. R. Tucker, "Nanoscale electronics based on 2D dopant patterns in silicon", J. Vac. Sci. Technol. B 22, 3182 (2004).

(9) S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. Shen, "Electron transport in laterally confined phosphorus d-layers in silicon", Phys. Rev. B 74, 153311 (2006).

B. Delta layer in Si

(1) T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. Kline, J. R. Tucker, "Ultra-dense phosphorous delta-layer grown into silicon from PH₃ molecular precursors", Appl. Phys. Lett. 80, 1580-1582 (2002).

C. Surface Science

(1) T. C. Shen, C. Wang, J. W. Lyding and J. R. Tucker, "A STM study of surface reconstructions on Si(111):B", Phys. Rev. B 50, 7453 (1994).

(2) T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, R. E. Walkup, "Atomic scale desorption through electronic and vibrational excitation mechanisms", Science 268, 1590 (1995).

(3) Ph. Avouris, R. E. Walkup, A. R. Rossi, H. C. Akpati, P. Nordlander, T. C. Shen, G. C. Abeln and J. W. Lyding, "Breaking individual chemical bonds via STM-induced excitations", Surf. Sci. 363, 368 (1996).

(4) Ph. Avouris, R. E. Walkup, A. R. Rossi, T.-C. Shen, G. C. Abeln, J. R. Tucker, and J. W. Lyding, "STM-induced H atom desorption from Si(100): isotope effects and site selectivity", Chem. Phys. Lett. 257, 148 (1996).

(5) T.-C. Shen and Ph.Avouris, " Electron stimulated desorption by scanning tunneling microscope", Surf. Sci. 390, 35 (1997).

(6) T.-C. Shen, X. Yao, and W. G. Klemperer, "Surface morphology and nanolithography on NH4F etched Si(111) surfaces"(submitted to Appl. Surf. Sci.)

(7) T.-C. Shen, J.A. Steckel, and K.D. Jordan,"Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface" Surf. Sci. 446, 211 (2000)

(8) J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, "The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)," Surf. Sci. 538, L471 (2003).

(9) J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, "Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing," Appl. Surf. Sci. 220, 293 (2003).

(10) J.-Y. Ji, T.-C. Shen, "Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces," Phys. Rev. B 70, 115309 (2004).

(11)J.-Y. Ji, T.-C. Shen, "A scanning tunneling microscopy study of PH3 adsorption on Si(111)-7x7 surfaces, P-segregation and thermal desorption", Surf. Sci.(2007).

D. Nanolithography

(1) T. C. Shen, R. T. Brockenbrough, J. R. Tucker, and J. W. Lyding, "Ion irradiation effects on graphite with scanning tunneling microscope", J. Vac. Sci. Technol. B 9, 1376 (1991) .

(2) J. W. Lyding, T. C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln "Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum scanning tunneling microscope", Appl. Phys. Lett. 64, 2010 (1994).

(3) J. W. Lyding, G. C. Abeln, T.-C. Shen, C. Wang and J. R. Tucker, "Nanometer scale patterning and oxidation of silicon surfaces with an ultrahigh vacuum scanning tunneling microscope", J. Vac. Sci. Technol. B 12, 3735 (1994).

(4) J. R. Tucker, C. Wang, J. W. Lyding, T.-C. Shen, and G. C. Abeln, "Nanometer scale MOSFETs and STM patterning on Si", in Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 322, (1994).

(5) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, E. T. Foley, and J. R. Tucker, "Silicon nanofabrication and chemical modification by UHV-STM", Mat. Res. Soc. Symp. Proc. 380, 187 (1995).

(6) G. C. Abeln, T.-C. Shen, J. R. Tucker, and J. W. Lyding, "Nanoscale STM-patterning and chemical modification of the Si(100) surface", Micro. Eng. 27, 23 (1995).

(7) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, and J. R. Tucker, "Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy", Nanotechnology 7, 128 (1996).

(8) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, P. A. Scott, J. R. Tucker, P. Avouris, and R. E. Walkup, "Ultrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces", Israel J. of Chem. 36, 3 (1996).

(9) T.-C. Shen, "Nanofabrication on Silicon Surfaces by STM", in Chemistry and Physics of Small Structures, 2, 1997 OSA Technical Digest Series, pp.56-58.

E. Oxide Patterns

(1) T.-C. Shen, C. Wang, J. W. Lyding and J. R. Tucker, "Nanoscale oxide patterns on Si (100) surfaces", Appl. Phys. Lett. 66, 976 (1995).

F. Aluminum Patterns

(1) T.-C. Shen, C. Wang, and J. R. Tucker, " Atomic depassivation and metallization of the Si(100)-2x1:H surface", in Atomic and molecular wires, edited by C. Joachim and S. Roth (Kluwer Academic, 1997).

(2) T.-C. Shen, C. Wang, and J. R. Tucker, " Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning", Phys. Rev. Lett. 78, 1271 (1997)

(3) T.-C. Shen, C. Wang, and J. R. Tucker," The initial stage of nucleation and growth of Al on H/Si(100)-1x1 by dimethylaluminum hydride vapor deposition", Appl. Surf. Sci. 141, 228 (1999).

G. Theoretical Physics

(1) D. J. O'Connor, B. L. Hu, and T. C. Shen, "Symmetry behavior in the Einstein universe: effect of spacetime curvature and arbitrary field coupling", Phys. Lett. 130 B, 31 (1983).

(2) T. C. Shen, B. L. Hu, and D. J. O'Connor, "Symmetry behavior of the static Taub universe: effect of curvature anisotropy", Phys. Rev. D 31, 2401 (1985).

(3) B. L. Hu, and T. C. Shen, "Weak angle from Kaluza-Klein theory with deformed internal space", Phys. Lett. 178 B, 373 (1986).

(4) T. C. Shen, and J. Sobczyk, "Higher-dimensional self-consistent solution with deformed internal spaces", Phys. Rev. D36, 397 (1987).

(5) T. C. Shen, "Bubbles without cores", Phys. Rev. D 37, 3537 (1988).

(6) T. C. Shen, "On the possibility of gravitationally induced semi-classical vacuum decay", Phys. Lett. 220 B, 42 (1989).

(7) J. C. Huang, and T. C. Shen, "Chiral symmetry breaking in QED for weak coupling", J. Phys. G 17, 573 (1991).


		Welcome to the Utah State University Nanoelectronics Laboratory nanola
Home Research Current Focus Research Highlights Teaching Group Current Members Previous Members Gallery Publications Links	Publications A. Nanoscale Devices (1) J. R. Tucker, C. Wang and T.-C. Shen,"Metal silicide patterning: a new approach to silicon nanoelectronics", Nanotechnology 7, 275 (1996). (2) J. R. Tucker, and T.-C. Shen, "New approaches to silicon nanoelectronics", Future Electronics Device report 9 Suppl.2, 2 (1998). (3) J. R. Tucker and T. C. Shen, "Prospects for atomically ordered device structures based on STM lithography", Solid State Electronics 42, 1061 (1998). (4) J. R. Tucker and T.-C. Shen, "Toward atom-scale silicon electronics", J. Surf. Analy. 3, 172 (1998). (5) J.R. Tucker and T.-C. Shen, "Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in Silicon?", Int. J. Circuit Theo. Appl. 28, 553 (2000). (6) T.-C. Shen, "Role of scanning probes in nanoelectronics: a critical review", Surf. Rev. Lett. 7, 683 (2000). (7) J. R. Tucker and T.-C. Shen, "Fabricating an all-epitaxial quantum computer" Quantum Information Computation 1, 129-133 (2001). (8) T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. L.Yang, R. R. Du, J. R. Tucker, "Nanoscale electronics based on 2D dopant patterns in silicon", J. Vac. Sci. Technol. B 22, 3182 (2004). (9) S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. Shen, "Electron transport in laterally confined phosphorus d-layers in silicon", Phys. Rev. B 74, 153311 (2006). B. Delta layer in Si (1) T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. Kline, J. R. Tucker, "Ultra-dense phosphorous delta-layer grown into silicon from PH₃ molecular precursors", Appl. Phys. Lett. 80, 1580-1582 (2002). C. Surface Science (1) T. C. Shen, C. Wang, J. W. Lyding and J. R. Tucker, "A STM study of surface reconstructions on Si(111):B", Phys. Rev. B 50, 7453 (1994). (2) T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, R. E. Walkup, "Atomic scale desorption through electronic and vibrational excitation mechanisms", Science 268, 1590 (1995). (3) Ph. Avouris, R. E. Walkup, A. R. Rossi, H. C. Akpati, P. Nordlander, T. C. Shen, G. C. Abeln and J. W. Lyding, "Breaking individual chemical bonds via STM-induced excitations", Surf. Sci. 363, 368 (1996). (4) Ph. Avouris, R. E. Walkup, A. R. Rossi, T.-C. Shen, G. C. Abeln, J. R. Tucker, and J. W. Lyding, "STM-induced H atom desorption from Si(100): isotope effects and site selectivity", Chem. Phys. Lett. 257, 148 (1996). (5) T.-C. Shen and Ph.Avouris, " Electron stimulated desorption by scanning tunneling microscope", Surf. Sci. 390, 35 (1997). (6) T.-C. Shen, X. Yao, and W. G. Klemperer, "Surface morphology and nanolithography on NH4F etched Si(111) surfaces"(submitted to Appl. Surf. Sci.) (7) T.-C. Shen, J.A. Steckel, and K.D. Jordan,"Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface" Surf. Sci. 446, 211 (2000) (8) J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, "The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)," Surf. Sci. 538, L471 (2003). (9) J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, "Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing," Appl. Surf. Sci. 220, 293 (2003). (10) J.-Y. Ji, T.-C. Shen, "Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces," Phys. Rev. B 70, 115309 (2004). (11)J.-Y. Ji, T.-C. Shen, "A scanning tunneling microscopy study of PH3 adsorption on Si(111)-7x7 surfaces, P-segregation and thermal desorption", Surf. Sci.(2007). D. Nanolithography (1) T. C. Shen, R. T. Brockenbrough, J. R. Tucker, and J. W. Lyding, "Ion irradiation effects on graphite with scanning tunneling microscope", J. Vac. Sci. Technol. B 9, 1376 (1991) . (2) J. W. Lyding, T. C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln "Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum scanning tunneling microscope", Appl. Phys. Lett. 64, 2010 (1994). (3) J. W. Lyding, G. C. Abeln, T.-C. Shen, C. Wang and J. R. Tucker, "Nanometer scale patterning and oxidation of silicon surfaces with an ultrahigh vacuum scanning tunneling microscope", J. Vac. Sci. Technol. B 12, 3735 (1994). (4) J. R. Tucker, C. Wang, J. W. Lyding, T.-C. Shen, and G. C. Abeln, "Nanometer scale MOSFETs and STM patterning on Si", in Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 322, (1994). (5) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, E. T. Foley, and J. R. Tucker, "Silicon nanofabrication and chemical modification by UHV-STM", Mat. Res. Soc. Symp. Proc. 380, 187 (1995). (6) G. C. Abeln, T.-C. Shen, J. R. Tucker, and J. W. Lyding, "Nanoscale STM-patterning and chemical modification of the Si(100) surface", Micro. Eng. 27, 23 (1995). (7) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, and J. R. Tucker, "Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy", Nanotechnology 7, 128 (1996). (8) J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, P. A. Scott, J. R. Tucker, P. Avouris, and R. E. Walkup, "Ultrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces", Israel J. of Chem. 36, 3 (1996). (9) T.-C. Shen, "Nanofabrication on Silicon Surfaces by STM", in Chemistry and Physics of Small Structures, 2, 1997 OSA Technical Digest Series, pp.56-58. E. Oxide Patterns (1) T.-C. Shen, C. Wang, J. W. Lyding and J. R. Tucker, "Nanoscale oxide patterns on Si (100) surfaces", Appl. Phys. Lett. 66, 976 (1995). F. Aluminum Patterns (1) T.-C. Shen, C. Wang, and J. R. Tucker, " Atomic depassivation and metallization of the Si(100)-2x1:H surface", in Atomic and molecular wires, edited by C. Joachim and S. Roth (Kluwer Academic, 1997). (2) T.-C. Shen, C. Wang, and J. R. Tucker, " Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning", Phys. Rev. Lett. 78, 1271 (1997) (3) T.-C. Shen, C. Wang, and J. R. Tucker," The initial stage of nucleation and growth of Al on H/Si(100)-1x1 by dimethylaluminum hydride vapor deposition", Appl. Surf. Sci. 141, 228 (1999). G. Theoretical Physics (1) D. J. O'Connor, B. L. Hu, and T. C. Shen, "Symmetry behavior in the Einstein universe: effect of spacetime curvature and arbitrary field coupling", Phys. Lett. 130 B, 31 (1983). (2) T. C. Shen, B. L. Hu, and D. J. O'Connor, "Symmetry behavior of the static Taub universe: effect of curvature anisotropy", Phys. Rev. D 31, 2401 (1985). (3) B. L. Hu, and T. C. Shen, "Weak angle from Kaluza-Klein theory with deformed internal space", Phys. Lett. 178 B, 373 (1986). (4) T. C. Shen, and J. Sobczyk, "Higher-dimensional self-consistent solution with deformed internal spaces", Phys. Rev. D36, 397 (1987). (5) T. C. Shen, "Bubbles without cores", Phys. Rev. D 37, 3537 (1988). (6) T. C. Shen, "On the possibility of gravitationally induced semi-classical vacuum decay", Phys. Lett. 220 B, 42 (1989). (7) J. C. Huang, and T. C. Shen, "Chiral symmetry breaking in QED for weak coupling", J. Phys. G 17, 573 (1991).